IRF223 Datasheet, MOSFET, Intersil Corporation

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IRF223 Features and benefits

* 4.0A and 5.0A, 150V and 200V
* rDS(ON) = 0.8Ω and 1.2Ω
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteri.

IRF223 Application

such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar swi.

IRF223 Description

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power.

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